SSM6E03TU 2014-03-01 1 toshiba multi-chip device silicon p-channel mos type + n-channel mos type SSM6E03TU power management switch applications ? p-channel mosfet and 1.8 v drive ? n-channel mosfet and 1.5 v drive ? p-channel mosfet and n-channel mosfet incorporated into one package. ? low power dissipation due to p-channel mosfet that features low r ds (on) and low-voltage operation q1 absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v ds ?20 v gate-source voltage v gss 8 v dc i d -1.8 drain current pulse i dp (note 1) -3.6 a q2 absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v ds 20 v gate-source voltage v gss 10 v dc i d 0.1 drain current pulse i dp (note 1) 0.2 a absolute maximum ratings (q1, q2 common) (ta = 25c) characteristics symbol rating unit drain power dissipation p d (note 2) 0.5 w channel temperature t ch 150 c storage temperature range t stg ? 55 to 150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temper ature/current/voltage, etc. ) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). note 1: pulse width limited by maximum channel temperature. note 2: mounted on an fr4 board (25.4 mm 25.4 mm 1.6 mm, cu pad: 645 mm 2 ) marking equivalent circuit (top view) unit: mm uf6 jedec D jeita D toshiba 2-2t1d weight: 7.0 mg (typ.) 1.nch source 2.pch drain 3.pch drain 4.pch source 5.nch gate 6.pch gate nch drain 0.3-0.05 6 1.70.1 2.10.1 1.30.1 1 2 0.65 0.65 3 2.00.1 0.16-0.05 5 4 0.70.05 +0.1 +0.06 6 5 4 1 2 3 ktc 6 5 4 1 2 3 q2 q1 start of commercial production 2006-10
SSM6E03TU 2014-03-01 2 q1 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit v (br) dss i d = -1 ma, v gs = 0 -20 ? ? drain?source breakdown voltage v (br) dsx i d = -1 ma, v gs = +8 v -12 ? ? v drain cutoff current i dss v ds = -20 v, v gs = 0 ? ? -10 a gate leakage current i gss v gs = 8 v, v ds = 0 ? ? 1 a gate threshold voltage v th v ds = -3 v, i d = -1 ma -0.3 ? -1.0 v forward transfer admittance ? y fs ? v ds = -3 v, i d = -1 a (note 3) 1.8 3.7 ? s i d = -1.0 a, v gs = -4 v (note 3) ? 105 144 i d = -0.5 a, v gs = -2.5 v (note 3) ? 138 180 drain?source on-resistance r ds (on) i d = -0.2 a, v gs = -1.8 v (note 3) ? 190 335 m input capacitance c iss ? 335 ? output capacitance c oss ? 70 ? reverse transfer capacitance c rss v ds = -10 v, v gs = 0, f = 1 mhz ? 56 ? pf turn-on time t on ? 20 ? switching time turn-off time t off v dd = -10 v, i d = -1.0 a, v gs = 0 to -2.5 v, r g = 4.7 ? 20 ? ns drain?source forward voltage v dsf i d = 1.8 a, v gs = 0 (note 3) ? 0.85 1.2 v note 3: pulse test q2 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit drain-source breakdown voltage v (br) dss i d = 0.1 ma, v gs = 0 20 ? ? v drain cut-off current i dss v ds = 20 v, v gs = 0 ? ? 1 a gate leakage current i gss v gs = 10 v, v ds = 0 ? ? 1 a gate threshold voltage v th v ds = 3 v, i d = 0.1 ma 0.6 ? 1.1 v forward transfer admittance |y fs | v ds = 3 v, i d = 10 m a (note 3) 40 ? ? ms i d = 10 ma, v gs = 4 v (note 3) ? 1.5 3.0 i d = 10 ma, v gs = 2.5 v (note 3) ? 2.2 4.0 drain-source on-resistance r ds (on) i d = 1 ma, v gs = 1.5 v (note 3) ? 5.2 15 input capacitance c iss ? 9.3 ? output capacitance c oss ? 9.8 ? reverse transfer capacitance c rss v ds = 3 v, v gs = 0, f = 1 mhz ? 4.5 ? pf turn-on time t on ? 70 ? switching time turn-off time t off v dd = 3 v, i d = 10 ma, v gs = 0 to 2.5 v, r g = 50 ? 125 ? ns note 3: pulse test
SSM6E03TU 2014-03-01 3 switching time test circuit (q1) (a) test circuit (b) v in switching time test circuit (q2) precaution(pch) v th can be expressed as the voltage between the gate and source when the low operating current value is i d = -1ma for this product. for normal switching operation, v gs (on) requires a higher voltage than v th and v gs (off) requires a lower voltage than v th . (the relationship can be established as follows: v gs (off) < v th < v gs (on). ) be sure to take this into consideration when using the device. precaution(nch) v th can be expressed as the voltage between the gate and source when the low operating current value is i d = 0.1ma for this product. for normal switching operation, v gs (on) requires a higher voltage than v th and v gs (off) requires a lower voltage than v th . (the relationship can be established as follows: v gs (off) < v th < v gs (on). ) be sure to take this into consideration when using the device. handling precaution when handling individual devices (which are not yet mount ed on a circuit board), ensure that the environment is protected against static electricity. o perators should wear anti-static clothing, and containers and other objects that come into direct contact with devices s hould be made of anti-static materials. thermal resistance r th (j-a) and drain power dissipation p d vary depending on board material, board area, board thickness and pad area. when using this device, please take heat dissipation into consideration. (c) v out v dd = ? 10 v r g = 4.7 duty 1% v in : t r , t f < 5 ns common source ta = 25c in 0 ? 2.5v 10 s v dd out r g r l t on 90% 10% ?2.5 v 0 v 90% 10% t off t r t f v ds ( on ) v dd (c) v out (b) v in t on 90% 10% 0 v 2.5 v 10% 90% t off t r t f v dd v ds ( on ) v dd = 3 v duty 1% v in : t r , t f < 5 ns (z out = 50 ) common source ta = 25c v dd out in 2.5 v 0 10 s 50 r l (a) test circuit
SSM6E03TU 2014-03-01 4 q1 (pch mosfet) id - vds 0 -1 -2 -3 -4 -5 0 -0.2 -0.4 -0.6 -0.8 -1 drain-source voltage vds (v) drain current id (a) vgs = -1.2 v -1.5 -10 -4 -1.8 -2.5 common source ta = 25 id - vgs -0.0001 -0.001 -0.01 -0.1 -1 -10 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6 -1.8 -2 -2.2 -2.4 gate-source voltage vgs (v) drain current id (a) ta = 85 -25 25 common source vds = -3 v rds (on) - vgs 0 100 200 300 012345678910 gate-source voltage vgs (v) drain-source on-resistance rds (on)(m) common source ta = 25 id = -1 a -0.5 a -0.2 a rds (on) - id 0 50 100 150 200 250 300 0 -1-2-3-4-5 drain current id (a) drain-source on-resistance rds (on) (m) common source ta = 25 vgs = -1.8 v -4 v -2.5 v rds (on) - ta 0 50 100 150 200 250 300 -60-35-1015406590115140 ambient temperature ta () drain-source on-resistance rds (on)() vgs = -4 v, id = -1 a -2.5 v, -0.5 a -1.8 v, -0.2 a common source vth - ta -0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 -25 0 25 50 75 100 125 150 ambient temperature ta () gate threshold voltage vth(v) common source id = -1 ma vds = -3 v ? 1 ? 2 ? 3 ?4 ? 5 ? 6 ? 7 ? 8 ? 10 ? 9
SSM6E03TU 2014-03-01 5 q1 (pch mosfet) pd - ta 0 200 400 600 800 1000 0 20 40 60 80 100 120 140 160 ambient temperature ta (c) drain power dissipation pd (mw) mounted on an fr4 board (25.4mm25.4mm1.6mm) cu pad :25.4mm25.4mm c - vds 10 100 1000 -0.1 -1 -10 -100 drain-source voltage vds (v) capacitance c (pf) ciss coss crss common source vgs = 0 v f = 1 mhz ta = 25 |yfs| - id 0.1 1 10 -0.01 -0.1 -1 -10 drain current id (a) forward transfer admittance |yfs| (s) ta = 85 -25 25 common source vds = -3 v ta = 25 idr - vds 0.001 0.01 0.1 1 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 drain-source voltage vds (v) drain reverse current idr (a ) ta = 85 25 -25 common source vgs = 0 ta = 25 t - id 1 10 100 1000 0.01 0.1 1 10 drain current id (a) switching time t (ns ) common source vdd = -10 v vgs = 0 to -2.5 v ta = 25 toff tf ton tr ? 0.01 ? 0.1 ? 1 ? 10
SSM6E03TU 2014-03-01 6 q2 (nch mosfet) i d ? v ds i d ? v gs r ds (on) ? i d r ds (on) ? v gs r ds (on) ? ta v th ? ta drain-source voltage v ds (v) gate-source voltage v gs (v) drain current i d (ma) gate-source voltage v gs (v) ambient temperature ta (c) ambient temperature ta (c) drain current i d (ma) drain current i d (ma) drain-source on resistance r ds (on) ( ) drain-source on resistance r ds (on) ( ) gate threshold voltage v th (v) drain-source on resistance r ds (on) ( ) 2.5 v v gs = 1.5 v 0 1 4 12 1000 10 2 6 8 100 common source ta = 25 c 10 4 v 0 0 100 250 12 1.5 0.5 50 150 200 v gs = 1.3 v 1.5 1.7 1.9 common source ta = 25 c 3 4 10 2.5 2.3 2.1 04 1 0 8 26 0 2 6 1 4 5 3 25c ta = 100c ? 25c common source i d = 10 ma 02 3 1 0.01 1 1000 0.1 10 100 ta = 100c common source v ds = 3 v ? 25c 25c 0 2 8 6 4 2.5 v, 10 ma v gs = 1.5 v, i d = 1 ma common source ? 25 50 150 125 0 75 25 100 4 v, 10 ma common source i d = 0.1 ma v ds = 3 v ? 25 50 150 125 0 75 25 100 0 0.4 2 1.2 1.6 0.8
SSM6E03TU 2014-03-01 7 q2 (nch mosfet) ? y fs ? ? i d i dr ? v ds c ? v ds t ? i d drain current i d (ma) drain-source voltage v ds (v) drain-source voltage v ds (v) drain current i d (ma) drain reverse current i dr (ma) forward transfer admittance ? y fs ? (ms) switching time t (ns) capacitance c (pf) 1 10 100 1000 1 3 5 10 30 50 100 300 500 common source v ds = 3 v ta = 25 c 0.1 1 10 100 10 30 50 100 300 500 1000 3000 5000 common source v dd = 3 v v gs = 0 to 2.5 v ta = 25 c t r t on t f t off 0 100 250 50 150 200 0 ? 1.4 ? 0.4 ? 0.2 ? 0.6 ? 0.8 ? 1 ? 1.2 common source v gs = 0 v ta = 25 c g d s i dr c iss c oss c rss common source v gs = 0 v f = 1 mhz ta = 25 c 0.3 10 100 1 5 50 0.1 1 10 100 5 50 0.5 30 3 0.5 3 30 0.3
SSM6E03TU 2014-03-01 8 restrictions on product use ? toshiba corporation, and its subsidiaries and affiliates (collect ively "toshiba"), reserve the right to make changes to the in formation in this document, and related hardware, software and systems (collectively "product") without notice. ? this document and any information herein may not be reproduc ed without prior written permission from toshiba. even with toshiba's written permission, reproduc tion is permissible only if reproduction is without alteration/omission. ? though toshiba works continually to improve product's quality and reliability, product can malfunction or fail. customers are responsible for complying with safety standards and for prov iding adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a ma lfunction or failure of product could cause loss of human life, b odily injury or damage to property, including data loss or corruption. before customers use the product, create designs including the product, or incorporate the product into their own applications, cu stomers must also refer to and comply with (a) the latest versions of all relevant toshiba information, including without limitation, this document, the specifications, the data sheets and application notes for product and the precautions and condi tions set forth in the "toshiba semiconductor reliability handbook" and (b) the instructions for the application with which the product will be us ed with or for. customers are solely responsible for all aspe cts of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this product in such design or applications; (b) eval uating and determining the applicability of any info rmation contained in this document, or in c harts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operatin g parameters for such designs and applications. toshiba assumes no liability for customers' product design or applications. ? product is neither intended nor warranted fo r use in equipments or systems that require extraordinarily high levels of quality and/or reliability, and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage and/or serious public impact ( " unintended use " ). except for specific appl ications as expressly stated in this document, unintended use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used f or automobiles, trains, ships and other transportation, traffic si gnaling equipment, equipment used to control combustions or expl osions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. if you use product for unintended use, toshiba assumes no liability for product. for details, please contact your toshiba sales representative. ? do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy product, whether in whole or in part. ? product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. ? the information contained herein is pres ented only as guidance for product use. no re sponsibility is assumed by toshiba for an y infringement of patents or any other intellectual property rights of third parties that may result from the use of product. no license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. ? absent a written signed agreement, except as provid ed in the relevant terms and conditions of sale for product, and to the maximum extent allowable by law, toshiba (1) assumes no liability wh atsoever, including without limitation, indirect, co nsequential, special, or incidental damages or loss, including without limitation, loss of profit s, loss of opportunities, business interruption and loss of data, and (2) disclaims any and all express or implied warranties and conditions related to sale, use of product, or information, including warranties or conditions of merchantability, fitness for a particular purpose, accuracy of information, or noninfringement. ? do not use or otherwise make available product or related so ftware or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or m anufacturing of nuclear, chemical , or biological weapons or missi le technology products (mass destruction w eapons). product and related software and technology may be controlled under the applicable export laws and regulations including, without limitat ion, the japanese foreign exchange and foreign trade law and t he u.s. export administration regulations. export and re-export of pr oduct or related software or technology are strictly prohibit ed except in compliance with all appl icable export laws and regulations. ? please contact your toshiba sales representative for details as to environmental matters such as the rohs compatibility of pro duct. please use product in compliance with all applicable laws and regula tions that regulate the inclusion or use of controlled subs tances, including without limitation, the eu rohs directive. toshiba assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations.
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